| PART |
Description |
Maker |
| MCH4014 |
RF Transistor 12V 30mA fT=10GHz NPN Single MCPH4
|
ON Semiconductor
|
| MAX662A |
12V, 30mA Flash Memory Programming Supply(12V,30mA快擦写存储器编程电源,电荷泵电压转换器) 12V30mA闪存存储器编程电
|
Maxim Integrated Products, Inc.
|
| BL8052 |
12V, 30mA Flash Memory Programming Supply
|
SHANGHAI BELLING CO., L...
|
| 2SC4186 2SC4186T63 2SC4186T62 2SC4186T64 |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 30MA I(C) | SOT-323
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
|
NEC Corp.
NEC[NEC]
|
| NP1-6 NP2.8-12 NP12-6 NP7-12 NPL38-12 NP38-12 NP65 |
BLEIAKKU 6V 250G
BATTERY 12V 2.8AH
BATTERY 6V 12AH
BLEIAKKU 12V 2800G
BLEIAKKU NPL 12V 14.7KG
BLEIAKKU 12V 13800G
BLEIAKKU 12V 22700G
BLEIAKKU 6V 2200G
BLEIAKKU 12V 4000G
BLEIAKKU 12V 6.3KG
BLEIAKKU 12V 5000G
BLEIAKKU 12V 900G
BATTERY 6V 7AH
BATTERY 12V 2.3AH 蓄电2V 2.3AH
BLEIAKKU NPL 12V 24KG BLEIAKKU不良贷款12V4公斤
|
Yuasa Battery, Inc.
|
| 2SC3841 2SC3841P 2SC3841Q 2SC3841T62 2SC3841T64 2S |
For UHF tuner, MIXER and OSC.
UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 30MA I(C) | SOT-346
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 12V的五（巴西）总裁| 30mA的一（c）|的SOT - 346
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| PHT4N10T |
12V, 30mA Flash Memory Programming Supply; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 3.5AI（四）|的SOT - 223
|
Microsemi, Corp.
|
| SFT4959 |
30mA 18 VOLTS PNP TRANSISTOR
|
SSDI[Solid States Devices, Inc]
|
| BFR183W Q62702-F1493 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 2SK241 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,30MA I(D),MICRO-X
From old datasheet system
|
Toshiba.
|
| RM500DZ-M RM500DZ-H RM500UZ-M RM500DZ-24 RM500DZ-2 |
Rectifier Diodes, 800V
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
HIGH POWER GENERAL USE INSULATED TYPE 大功率常规使用绝缘型
BATTERY SEALED LEAD ACID 12V 5AH 大功率常规使用绝缘型
BATT SEALED LEAD ACID 12V 50AH 大功率常规使用绝缘型
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
